1 h igh diode semiconductor MJD122 feature z z z to-25 2 -2l plastic-encapsulate transistors symbol parameter value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 100 v v ebo emitter-base voltage 5 v i c collector current -continuous 8 a p c collector power dissipation 1.5 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t =25 unless otherwise specified transistor npn high dc current gain electrically similar to popular tip122 built-in a damper diode at e-c parameter symbol test conditions m in t yp max unit collector-base breakdown voltage v (br)cbo ic= 1 ma,i e =0 100 v collector-emitter breakdown voltage v (br)ceo ic= 30 ma,i b =0 100 v emitter-base breakdown voltage v (br)ebo i e = 3 ma,i c =0 5 v collector cut-off current i cbo v cb = 100 v,i e =0 10 a collector-emitter cut-off current i ceo v ce = 50 v,i e =0 10 a emitter cut-off current i ebo v eb = 5 v,i c =0 2 ma h fe(2) v ce = 4 v,i c = 4 a 1000 12000 dc current gain h fe(3) v ce = 4 v,i c =8a 100 v ce(sat) 1 i c = 4 a,i b = 16 ma 2 v collector-emitter saturation voltage v ce(sat) 2 i c = 8 a,i b =80ma 4 v base-emitter saturation voltage v be(sat) i c = 8 a,i b =80ma 4.5 v base-emitter voltage * v be v ce = 4 v,i c =4a 2.8 v collector output capacitance c ob v cb = 10 v,i e =0,f= 0.1 mhz 200 pf to-2 52-2l 1. base 2. collector 3. emitter 2 1 3
2 h igh diode semiconductor typical characteristics 0.1 1 10 10 100 1000 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 012345 0 1 2 3 4 5 0.1 1 100 1000 10000 100000 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 0.1 1 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 0.4 0.8 1.2 1.6 2.0 0.1 1 0.4 0.8 1.2 1.6 2.0 f=1mhz i e =0/i c =0 t a =25 20 v cb / v eb c ob / c ib ?? c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =4v t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (v) 0.52ma 0.48ma 0.44ma 0.4ma 0.36ma 0.32ma 0.28ma 0.24ma 0.2ma i b =0.16ma static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) common emitter v ce =4v 8 i c t a =25 t a =100 dc current gain h fe collector current i c (a) p c ?? t a collector power dissipation p c (w) ambient temperature t a ( ) 8 v be 8 =100 i c v besat ?? t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) h fe ?? =100 i c v cesat ?? 8 t a =25 t a =100 collector-emitter saturation voltage v cesat (v) collector current i c (a) i c ?? i c v cesat ?? t a =25 t a =100 =250 8 collector-emitter saturation voltage v cesat (v) collector current i c (a)
3 oe emcoctor b a b a a 2 . 2 0 2 . 4 0 1 2 . 0 a 1 0 . 0 0 0 0 . 1 2 5 2 1 . 4 0 1 . 0 0 . 0 . 3 1 . 0 c 0 . 4 0 . 5 4 0 . 0 1 . 0 0 . 5 0 . 0 1 . 1 0 1 . 3 0 1 5 . 1 0 5 . 4 0 2 4 . 3 0 0 . 0 0 0 . 3 0 . 0 0 . 2 0 5 . 3 5 e 2 . 1 2 . 3 . 0 1 0 . 4 0 0 0 . 0 m m
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